, li ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 S2600B, s2600d, s2600m, s2600n high voltage, medium current silicon controlled rectifiers for power switching, power control and ignition applications feature*: ? 800v, 125 deg. c 7j operating ? high dv/dt and di/dt capability m low switching losses ? high pulse current capability ? low forward and reverse leakage ? s/pos oxide glass multilayer passivation system ? advanced unlsurface construction m precise ion implanted diffusion source terminal designations cathode-^? ??j-anooe vv --- s low-profile to-205 maximum ratings, absolute-maximum values: vdrm vrrm it (rms) {to = 65 c) it (av) (tc = 65c. ? = 180 dag.) .... itsm (for 1 full cycle) di/dt i't (at 8.3 ms) (at 1.5ms) pgm (for 10/? max.) pg (av) (averaging tirne 10ms max.) . t storage ...,.,,.., tj S2600B 200 200 s2600d s2600m 82600n 400 600 boo v 400 600 800 v 7 a 4.5 a 100 a 200 a/pa 40 a*? 30 ? a's 15 w 0.5 w 6510150 *c --65 to 125 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
S2600B, s2600d, s2600m, s2600n electrical characteristics, at case temperature (tc) = 25 c unlesi otherwise specified characteristic repetitive peak forward and reverse blocking current rated vdrm and vrrm, gate open 8ttc = 125<>c forward "on state" voltage itm = 30a gate trigger current (dc) vd = 12vdo rl = 30 ohms gate trigger voltage (dc) vd = 12 vdc, rl = 30 ohms vd = vdrm, rl = 500 ohms, tc = 125c holding current vd = 12 vdc, it (initial) = 200ma critical rate of rise of off-state voltage (exponential waveform) tc = 125c, gate open, vd = vdrm S2600B, s2600d s2600m s2600n turn-on time it = 2a, vd - vdrm ig = 60ma turn-off time vd = vdrm. tc = 75c, dv/dt ? zowfis it = 2afor 50 u$, di/dt * 10a/ps ig ? 80ma at turn-on thermal resistance junction to case junction to ambient symbol idrom irrom vtm igt vgt ih dv/dt tgt tq rsjc rfija limits s2600 family min. - - - 0.2 - e ? - - typ. - 1.8 10 1 15 150 125 75 1.2 65 - max. 50 2 2.6 15 1.5 - - - - 7 150 units *?a ma v ma v ma v/us ms x/s "c/w "is* -n? ~bs71 ico |2b junction tewewtihe |tj] -hegc sate trigger voltace (v6tj wwmtlzeo) 0 p 0 q h h. m. ,qmjtb?mhiui. |
